研究方向

研究内容1：Si基功率半导体器件

开展Si基功率半导体器件的新结构、模型和实验研究，并开展相关器件的产业化工程研究工作，研究的器件包括：IGBT、DMOS、整流器、BJT、恒流器等。

研究内容2：宽禁带半导体（碳化硅）功率器件

开展宽禁带SiC基功率半导体器件的新结构、模型和实验研究，研究的器件包括：MESFET、IGBT、MOS等器件。

代表性论文

1.Jinping Zhang, Zehong Li, Bo Zhang and Zhaoji Li. A novel high performance TFS SJ IGBT with a buried oxide layer. Chinese Physics B, 2014, 23 (8): 088504 (1-6)

2.Jinping Zhang, Xiaojun Xia, Zehong Li, etc. A novel high performance enhanced-planar IGBT with P-type buried layer. ICCCAS‘13, 2013:327-330

3.Jinping Zhang, Z. Li and B. Zhang, etc. High performance CSTBT with p-type buried layer. Electronics Letters, 2012, 48 (9):525-527

4.Jinping Zhang, Zehong Li and Bo Zhang, etc. A novel high voltage light punch-through carrier stored trench bipolar transistor with buried p-layer. Chin. Phys. B, 2012, 21 (6): 068504 (1-6)

5.Jinping Zhang, Bo Zhang, Zhaoji Li. Asymmetric 3D tri-gate 4H-SiC MESFETs with a recessed drain drift region. Semiconductor Science and Technology, 2009, 24 (4): 5001-5005

6.Jinping Zhang, Yi Ye, Chunhua Zhou, Xiaorong Luo, Bo Zhang, Zhaoji Li. High breakdown voltage 4H-SiC MESFETs with floating metal strips, Microelectronic Engineering 2008, 85: 89–92.

7.Jinping Zhang, Xiaorong Luo, Zhaoji Li, Bo Zhang. Improved double-recessed 4H-SiC MESFETs structure with recessed source/drain drift region. Microelectronic Engineering 2007, 84: 2888–2891.

8.Jinping Zhang, B. Zhang, Z. Li. Simulation of high-power 4H-SiC MESFETs with 3D tri-gate structure. Electronics Letters, 2007, 43 (12): 92-94.

9.Jinping Zhang, Bo Zhang, Zhaoji Li. Improved Performance of 3D tri-gate 4H-SiC MESFETs with Recessed Drift Region. ICSICT’08, 2008: 1098-1101.