一、研究领域简介

主要从事第三代宽禁带异质结半导体氮化镓（GaN）异质结理论与建模仿真、微波毫米波GaN HEMT功率器件及MMIC、新型GaN电力电子器件及功率集成、SiC高温压力传感器可靠性等领域的研究。

二、研究方向

研究方向1：宽禁带GaN微波毫米波功率器件及MMIC

（1）微波功率GaN HEMT器件理论、建模、工艺、测试和功率合成技术。

（2）毫米波AlGaN/GaN HEMT、InAlN/GaN HEMT功率器件及MMIC技术。

研究方向2：新型GaN电力电子器件及功率集成

（1）高耐压AlGaN/GaN HFET理论建模、新结构优化设计和工艺实验。

（2）探索耗尽/增强型GaN基垂直器件新结构、功率集成的模块化技术。

研究方向3：SiC高温压力传感器可靠性

（1）SiC压力传感器的结构优化设计和环境应力仿真研究。

（2）SiC压力传感器的失效机理分析和可靠性评价技术。

三、承担参与的科研项目情况

先后主持或主研参与了国家973项目子专题2项、国家自然科学基金面上项目2项、XXXXXX备部预先研究项目3项、XXXXXX备部共性支撑项目5项、广东省战略新兴产业化项目1项以及多项横向合作项目等科研任务。

主要承担的科研项目包括：

1、装备预先研究项目：XXXXXX 失效机理及评价技术研究（31512050304），主持，2017-2019

2、国家自然科学基金面上项目（项目编号：61376078），主持，2014.01-2017.12

3、XXXXXX备部125预研项目：新型GaN XXXXXX 研究(51308030406)，主持，2011.01-2015.12

4、XXXXXX备部115预研项目：GaN XXXXXX 关键技术研究(51308030101)，主持，2006.01-2010.12

5、国家重大基础安全研究（973）项目子专题：GaN XXXXXX 研究(51327010202)，主持, 2004.01-2008.12

6、国家重大基础安全研究（973）项目子专题：应变 XXXXXX 方法（6139803-01），主持, 2009.01-2013.12

7、XXXXXX备部105预研项目：新型 XXXXXX GaN器件（41308060104），主研，2001.01-2005.12

8、中央高校基本科研业务费项目：高耐压 XXXXXX GaN HEMT新结构研究，主持，2012.07-2014.12

9、XXXXXX备部共性支撑项目共5项：1107GK00072、1004GK00362、0901GK001、0803GK00431，主持（2），2008-2015

一、代表性期刊论文

[40]Jiangfeng Du*,Zhenchao Li, Dong Liu, Zhiyuan Bai, Yang Liu, Qi Yu. "Design of high breakdown voltage vertical GaN p-n diodes with high-K/low-K compound dielectric structure for power electronics applications", Superlattices and Microstructures, 111:302-309 (2017) . (SCI)

[39]Zhiyuan Bai,Jiangfeng Du*, Yong Liu, Qi Xin, Yang Liu, Qi Yu. "Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiNx passivation",Solid-State Electronics,133 : 31–37(2017).(SCI)

[38]Jiangfeng Du*,Dong Liu, Yong Liu, Zhiyuan Bai, Zhiguang Jiang, Yang Liu, Qi Yu, "Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications", Superlattices and Microstructures, 111:656-664 (2017) . (SCI)

[37]Jiangfeng Du*, Ruonan Li, Zhiyuan Bai, Yong Liu, Qi Yu. "High breakdown voltage GaN-on-insulator based heterojunction field effect transistor with a partial back barrier layer",Superlattices and Microstructures, 111:760-766 (2017) . (SCI)

[36]Zhiyuan Bai,Jiangfeng Du*, Qi Xin, Ruonan Li, Qi Yu. "Simulation design of high reverse blocking high-K/low-K compound passivation AlGaN/GaN Schottky barrier diode with gated edge termination",Superlattices and Microstructures, 111:1000-1009 (2017) . (SCI)

[35]Jiangfeng Du, Kang Wang, Yong Liu, Zhiyuan Bai, Yang Liu, Zhihong Feng, Shaobo Dun, Qi Yu. "Influence of mesa edge capacitance on frequency behavior of millimeter-wave AlGaN/GaN HEMTs",Solid-State Electronics,129:1-5, (2017) (SCI)

[34] Yong Liu, Jing Ting Luo, Chao Zhao, Jian Zhou, Sameer Ahmad Hasan, Yifan Li, Michael Cooke,Qiang Wu, Wai Pang Ng,Jiangfeng Du, Qi Yu, Yang Liu, and Yong Qing Fu. "Annealing Effect on Structural, Functional, and Device Properties of Flexible ZnO Acoustic Wave Sensors Based on Commercially Available Al Foil",IEEE Trans. on Elecron Devices, 63(11):4535-4541,(2016) (SCI)

[33]Jiangfeng Du, Zehong Hou, Peilin Pan, Zhiyuan Bai, Qi Yu. "Design optimisation of AlGaN/GaN metal insulator semiconductor high electron mobility transistor with high-K/low-K compound gate dielectric layer for millimeter-wave application",Micro & Nano Letters.Vol. 11, Iss. 9, pp. 503-507, (2016) (SCI)

[32]Jiangfeng Du, Dong Liu, Zhiyuan Bai, Nanting Chen, and Qi Yu. "Design optimization of a high-breakdown-voltage GaN-based vertical HFET with composite current-blocking layer",J. Comput. Electron., 15: 1334-1339, (2016) (SCI)

[31]Jiangfeng Du, Dong Liu, Zhiyuan Bai, Qian Luo, and Qi Yu. "Design and simulation of high-breakdown-voltage GaN-based vertical field-effect transistor with interfacial charge engineering",Japanese Journal of Applied Physics, 55, 054301. (2016) (SCI)

[30]Jiangfeng Du, Nanting Chen, Zhiguang Jiang , Zhiyuan Bai, Yong Liu, Yang Liu, Qi Yu. "Study on transconductance non-linearity of AlGaN/GaN HEMTs considering acceptor-like traps in barrier layer under the gate",Solid-State Electronics, 115, A, 60-64 (2016). (SCI)

[29] Yong Liu, Yifan Li, Ahmed. M. el-Hady, C. Zhao,Jiangfeng Du, Yang Liu, Y.Q. Fu. "Flexible and bendable acoustofluidics based on ZnO film coated aluminium foil",Sensors and Actuators B, 221:230-235 (2015) (SCI)

[28]Jiangfeng Du, Dong Liu, Zhiyuan Bai, Yong Liu and Qi Yu. "Design of high breakdown voltage GaN-based vertical HFETs with p-GaN island structure for power applications",Superlattices and Microstructures, 85:690-696 (2015) . (SCI)

[27]Jiangfeng Du, Dong Liu, Ziqi Zhao, Zhiyuan Bai, Liang Li, Jianghui Mo and Qi Yu. "Design of High Breakdown Voltage GaN Vertical HFETs with p-GaN Buried Buffer Layers for Power Switching Applications",Superlattices and Microstructures, 83: 251-260 (2015). (SCI)

[26]Jiangfeng Du,Nanting Chen, Peilin Pan, et al."High breakdown voltage AlGaN/GaN HEMT with high-K/low-K compound passivation",Electronics Letters, 51(1):104-106 (2015). (SCI)

[25]Du Jiangfeng, Xu Peng, Wang Kang, et al. "Small Signal Modeling of AlGaN/GaN HEMTs with Consideration of CPW Capacitances",Journal of Semiconductors, 36(3):034009-1, (2015).

[24]Jiangfeng Du, Yong Liu, Jianghui Mo, Ziqi Zhao, Sini Huang, YangLiu, and Qi Yu. "Design and Simulation of a Nanoscale GaN-Based Vertical HFET with pnp-Superjunction Buffer Structure",Nanoscience and Nanotechnology Letters, 7(2):100-104,(2015). (SCI)

[23]Jiangfeng Du, Hui Yan, Chenggong Yin, Zhihong Feng, Shaobo Dun, and Qi Yu."Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model",Journal of Applied Physics, 115, 164510 (2014). (SCI)

[22]Jiangfeng Du, ZhiYuan Bai, Kunhua Ma, and Qi Yu."Influence of Trap State Effects on Buffer Leakage Current and Breakdown Voltage in Nano-Channel AlGaN/GaN DHFETs",Nanoscience and Nanotechnology Letters, 6, 794-797 (2014). (SCI)

[21]Jiangfeng Du, Peilin Pan, Hui Yan, and Qi Yu. "Design Optimization of Nanoscale AlGaN/GaN HEMTs with Composite Metal Gate Structure for Millimeter-Wave Application",Nanoscience and Nanotechnology Letters,6, 830-834 (2014). (SCI)

[20] Ziqi Zhao,Jiangfeng Du, Ziyu Zhao, and Qian Luo. "A Novel High-Voltage GaN Current Aperture Vertical Electron Transistor with Polarization-Doped Current Blocking Layer",Nanoscience and Nanotechnology Letters,6, 825-829 (2014). (SCI)

[19] Aixin Guo,Jiangfeng Du."Linear and nonlinear optical absorption coefficients and refractive index changes in asymmetrical Gaussian potential quantum wells with applied electric field"，Superlattices and Microstructures，64:158-166 (2013.12). (SCI)

[18]Jiangfeng Du, Xinchuan Zhang, Zhihong Feng, Shaobo Dun, Ziqi Zhao, Jianglong Yin and Kunhua Ma. "Correlation Between Electrical Properties Degradation and Short-Channel Effects in Nano-Gate AlGaN/GaN High Electron Mobility Transistors",Nanoscience and Nanotechnology Letters, 4(9): 944-947 (2012). (SCI)

[17] Ziqi Zhao,Jiangfeng Du, Qian Luo, and Mohua Yang. "Impact of Surface Traps on the Breakdown Voltage of Passivated AlGaN/GaN HEMTs under High-field Stress",Micro & Nano Letters, 11(7): 1140- 1142 (2012). (SCI)

[16] Qian Luo,JiangFeng Du, XiangZhan Wang, Ning Ning, Yang Liu and Qi Yu. "An Analytical Model for Field-Plate Optimization in High Electron Mobility Transistor",Advanced Materials Research, Optical, Electronic Materials and Applications II, Vol.529, p 33-36 (2012)

[15] Ziqi Zhao,Jiangfeng Du, Qi Yu, and Mohua Yang. "Influence of Deep-Level Traps on the Breakdown Characteristics of AlGaN/GaN High Electron Mobility Transistors",Nanoscience and Nanotechnology Letters, 4(8): 790-793 ( 2012). (SCI)

[14] Peng Xu,Jiangfeng Du, Shaobo Dun, Zhihong Feng, Qian Luo, Ziqi Zhao and Qi Yu. "Improvement of Small Signal Modeling and Parameter Extraction for AlGaN/GaN High Electron Mobility Transistor",Chinese Journal Of Vacuum Science And Technology, Vol.32(5):404-407 (2012).

[13] Shenghui Lu,Jiangfeng Du, Wei Zhou and Jianxin Xia. "Simplification of Non-Linear Dependence of Fermi Level on 2D Electron Gas Density in AlGaN/ GaN High Electron Mobility Transistors",Chinese Journal of Vacuum Science And Technology, Vol.31(2):225-228 (2011).

[12]Jiangfeng Du, Jinxia Zhao, Qian Luo, Qi Yu, Jianxin Xia and Mohua Yang. "Investigation of GaN-based multilayer structure films on sapphire substrate by spectroscopic ellipsometry",Journal of Functional Materials, Vol.31(5):878-880 (2010)

[11] Shenghui Lu,Jiangfeng Du, Qian Luo , Qi Yu , Wei Zhou and Jianxin Xia. "Analytical charge control model for AlGaN/GaN MIS-HFET including undepleted barrier layer",Journal of Semiconductor,Vol.31(9): 094004-1(2010)

[10] Shenghui Lu,Jiangfeng Du, Qian Luo, Qi Yu, Wei Zhou, Jianxin Xia and Mohua Yang. "An Analytic Linear Charge Control Model for Enhancement Mode AlGaN/GaN Insulated Gate HEMTs",Research and Progress of Solid State Electronics, Vol.30(3), pp.323-326(2010)

[09]JiangfengDu, Jinxia Zhao, Qi Yu and Mohua Yang. "X-ray Photoelectron Spectroscopy and Spectroscopic Ellipsometry Study of the Thermal Oxide on Gallium Nitride",Materials Review, Vol.23(11):12-14 (2009)

[08]Jiangfeng Du, Jinxia Zhao, Jie Wu, Yuehan Yang, Peng Wu, Chong Jin, and Wei Chen. "Electric Field Distribution Analytic Model for Field-Plated GaN HEMTs",Journal of Electronic Science and Technology of China, Vol.37(2):297-300 (2008)

[07]Jiangfeng Du, Dawei Luo, Qian Luo, Shenghui Lu, Qi Yu and Mohua Yang. "Temperature Distribution of Channel Electron in Field-Plated GaN HEMT for Reduction of Current Collapse",Semiconductor Technology, Vol.33 Supplement, 104-108(2008)

[06] Yanling Zhu,Jiangfeng Du, Muchang Luo, Hong Zhao, Wenbo Zhao, Lieyun Huang, Hong Ji, Qi Yu and Mohua Yang."Ohmic Contacts to n-type Al0.6Ga0.4N for Solar-Blind Detectors",Journal of Semiconductors, Vol.29(9), pp.1661-1665 (2008).

[05] Shenghui Lu,Jiangfeng Du, Chong Jin, Wei Zhou and Mohua Yang. "Investigation on the response dependence of gate step pulse in AlGaN/GaN HEMT",Research and Progress of Solid State Electronics, Vol.27(3), pp.335-338 (2007)

[04] Qian Luo,Jiangfeng Du, Mohua Yang and Liangchen Wang, Tong Jin and Yu Qi. "Back-to-back Schottky diode adopted for the measurement of GaN films and its Schottky contacts",Semiconductor Science Technology, 20(2005) 606-610. (SCI)

[03] Fei Long,Jiangfeng Du, Qian Luo, Wei Zhou, Jianxin Xia and Mohua Yang. "A Research on Current Collapse of GaN HEMTs Under DC High Voltage",Journal of Semiconductors, Vol.27 Supplement, 227-230(2006)

[02]Jiangfeng Du,Bo Zhao, Qian Luo, Qi Yu, Chong Jing and Jing-chun Li. "Inverstigation of Ti/Al/Ni/Au Multilayer Ohmic contact to unintentional doped GaN",Electronic Components and Materials, Vol.23 No.12, 2-6(2004).

[01] Qian Luo, Mohua Yang,Jiangfeng Du, Dinglei Mei, Liangchen Wang and Yunxia Bai. "New Method for Measurement of GaN Film and Its Schottky Cantact",Journal of Semiconductors, Vo1.25(12):1730-1734(2004).

二、代表性会议论文

[16]Jiangfeng Du, Dong Liu, Zhiyuan Bai and Qi Yu. "Over 10 kV Vertical GaN p-n Junction Diodes with High-K/Low-K Compound Dielectric Structure", International Forum on Wide Bandgap Semiconductors China (IFWS 2016),November 15-17, 2016，Beijing, China.

[15]Jiangfeng Du, Zhiyuan Bai, Yong Liu, Dong Liu, Qi Xin and Qi Yu."Impact of Residual Stress of SiN x Passivation on the Electrical Degradation of AlGaN/GaN MIS-HEMTs",International Workshop on WBG Semiconductor Power Electronics(IWWSPE 2016), 21 - 22 May 2016, Xi'an, China.

[14]Jiangfeng Du, Peilin Pan, Zhiyuan Bai, Nanting Chen and Qi Yu."High Breakdown Voltage AlGaN/GaN HEMTs with Nanoscale Compound Al Mole Fraction Barrier Layer", 2016 IEEE International Nanoelectronics Conference(INEC 2016), 9-11 May 2016, Chengdu, China.

[13]Jiangfeng Du, Yong Liu, Sini Huang, Ziqi Zhao, Qi Yu. "Design and Simulation of High Breakdown Voltage GaN-based Vertical HFET with pnp-Superjunction Buffer Structure", the 7th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[12]Jiangfeng Du, Dong Liu, Jie Luo, Peilin Pan, Ziqi Zhao, Qi Yu. "Design Optimization of High Breakdown Voltage GaN-VHFETs with p-GaNburied buffer Layer forPowerSwitchingApplications" , the 7th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[11]Nanting Chen,Jiangfeng Du, Zhiyuan Bai, Chenggong Yin, Hui Yan, Qi Yu. "Study on Transconductance Non-linearity of AlGaN/GaN HEMTsConsidering Acceptor-like Traps in Barrier Layer under the Gate" , the 7th International Conference on Technological Advances of Thin Films & Surface Coatings (ThinFilms2014), 15-18 July 2014, Chongqing, China.

[10]Jiangfeng Du, Kang Wang，Chenggong Yin, Zhiyuan Bai, Qi Yu, Zhihong Feng, Shaobo Dun. "Small Signal Modeling of 90 nm gate-length AlGaN/GaN HEMTs Considering Mesa Edge Effects", 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), 18-24 June 2014, Chengdu, China.

[09]Jiangfeng Du, Kunhua Ma, Ziqi Zhao, Qi Yu. "Simulation of Trap State Effects in GaN DHFETs on Buffer Leakage Current and Breakdown Voltage", 2013 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2013), 3-5 June 2013, Hongkong, China.

[08]Jiangfeng Du, Xinchuan Zhang, Zhihong Feng, Shaobo Dun, Ziqi Zhao, Jianglong Yin, Kunhua Ma, and Yan Pu. "Correlation between Electrical Properties Degradation and Short-channel Effects in Nano-gate AlGaN/GaN HEMTs", MMWCST2012, 19-20 April 2012, Chengdu, China.

[07]Ziqi Zhao, Dewei Liao, andJiangfeng Du,"Effects of surface traps on the breakdown voltage of passivated AlGaNGaN HEMTs under high-field stress", IEEE International Conference on Solid-State and Integrated Circuit Technology, 2012, Xi'an, China.

[06]Jiangfeng Du, Peng Xu, Shaobo Dun, Zhihong Feng, Luo Qian, Liu Yang, Yu Qi，Yang Mohua. "Modeling of AlGaN/GaN HEMT with Consideration of CPW Capacitances", 15th International Symposium on the Physics of Semiconductors and Applications. July 5-8, 2011, Jeju, Korea.

[05]Jiangfeng Du, Jinxia Zhao, Qi Yu, and Mohua Yang, "Activation characteristics of Si-implanted GaN by rapid thermal annealing", 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2010), Nov. 1- 4, 2010, Shanghai, China.

[04]Jiangfeng Du, Jinxia Zhao , Qian Luo , Zhiwei Yu , Jianxin Xia and Mohua Yang, "Growth and characteristics analysis of the thermal oxide grown on gallium nitride", IEEE the International Symposium on Photonics and Optoelectronics(SOPO2009),Wuhan,China, August 14-16,2009

[03]Jiangfeng Du, Dawei Luo, Qian Luo, Shenghui Lu, Qi Yu and Mohua Yang, "A study of the Temperature Distribution of Channel Electron in Field-Plated GaN HEMT for Reduction of Current Collapse", 15th National conference on Compound Semiconductor Materials, Microwave Devices and Optoelectronic Devices, Guangzhou, China, Nov.30- Dec.5, 2008

[02]Du Jiang-feng, Zhao Jin-xia, Wu Jie, Yang Yue-han, Jin Chong, "Electric Field Electric Field Distribution Analytic Model for Field-Plated GaN HEMTsDistribution Analytic Model for Field-Plated GaN HEMTs", 2007 Doctoral Forum of China, Shanxi Xi'an, 638-642, Sept. 2007

[01]Qian Luo,Jiangfeng Du, Mohua Yang, Shenghui Lu, Wei Zhou, Jianxin Xia and Qi Yu, "Investigation of Surface Charging Effects in AlGaN/GaN HEMT by a New Measurement Method", 2006 8th IEEE International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2006), October 23-26, 2006, Shanghai, China.

三、发明专利情况

[31]杜江锋, 李振超, 刘东, 白智元, 于奇，李述洲. 半导体结构、半导体组件及功率半导体器件，PCT国际发明专利，国际申请号：PCT/CN2016/095675，国际申请日：2016.08.17

[30]杜江锋, 陈南庭,潘沛霖，于奇. 具有体内复合场板结构的氮化镓基异质结场效应管. 中国发明专利, 申请日期：2014.09.05，授权号：ZL201410454183.4，授权日期：2018.04.20

[29]杜江锋, 潘沛霖,等. 一种具有复合栅介质层的氮化镓基异质结场效应晶体管. 中国发明专利, 申请日期：2014.10.11，授权号：ZL201410534795.4，授权日期：2018.01.12

[28]杜江锋, 潘沛霖, 陈南庭, 于奇. 一种氮化镓基增强型异质结场效应晶体管. 中国发明专利, 申请日期：2014.08.27，授权号：ZL201410427708.5，授权日期：2017.11.14

[27]杜江锋, 陈南庭，潘沛霖，于奇. 一种具有复合钝化层结构的场效应晶体管. 中国发明专利, 申请日期：2014.09.10，授权号：ZL201410457922.5，授权日期：2017.10.17

[26]杜江锋, 陈南庭,潘沛霖,于奇. 一种具有电偶极层结构的氮化镓基异质结场效应晶体管. 中国发明专利, 申请日期：2014.08.27，授权号：ZL201410427468.9，授权日期：2017.07.28

[25]杜江锋, 潘沛霖 等. 具有埋栅结构的氮化镓基增强耗尽型异质结场效应晶体管. 中国发明专利,申请日期：2014.08.29，授权号：ZL201410433662.8，授权日期：2017.05.10

[24]杜江锋, 赵子奇 等. 一种超结垂直氮化镓基异质结场效应晶体管，中国发明专利, 申请日期：2013.01.04，授权号：ZL201310000143.8，授权日期：2017.05.10

[23]杜江锋, 严慧 等. 一种具有复合金属栅的氮化镓基高电子迁移率晶体管, 中国发明专利, 申请日期：2013.08.21，授权号：ZL201310364505.1，授权日期：2017.04.19

[22]杜江锋, 刘东,陈南庭 等. 一种具有P型GaN岛的垂直氮化镓基异质结场效应晶体管. 中国发明专利,申请日期：2014.08.29，授权号：ZL201410433616.8，授权日期：2017.04.12

[21]杜江锋, 潘沛霖, 王康 等. 一种具有局部背势垒的氮化镓基功率异质结场效应晶体管. 中国发明专利, 申请日期：2014.11.24，授权号：ZL201410679795.3，授权日期：2017.04.05

[20]杜江锋, 潘沛霖, 陈南庭 等. 一种具有复合沟道层的氮化镓基增强型异质结场效应晶体管. 中国发明专利, 申请日期：2014.09.05，授权号： ZL201410454173.0，授权日期：2017.03.22

[19]杜江锋, 潘沛霖, 陈南庭, 刘东, 于奇. 一种具有复合势垒层的氮化镓基异质结场效应晶体管. 中国发明专利, 申请日期：2014.09.17，授权号：ZL201410476301.1，授权日期：2017.01.25

[18]杜江锋, 尹江龙 等. 一种具有纵向复合缓冲层的氮化镓基高电子迁移率晶体管，中国发明专利, 申请日期：2012.08.03，授权号：ZL201210281409.6，授权日期：2016.12.21

[17]杜江锋, 赵子奇 等.一种带有极化掺杂电流阻挡层的垂直氮化镓基异质结场效应晶体管, 中国发明专利, 申请日期：2013.01.04，授权号：ZL201310000142.3，授权日期：2016.04.27

[16]杜江锋, 赵子奇 等. 一种具有横向p-n结复合缓冲层结构的氮化镓基异质结场效应晶体管，中国发明专利, 申请日期：2012.09.14，授权号：ZL201210341509.3，授权日期：2016.04.27

[15]杜江锋, 赵子奇,尹江龙 等. 一种具有背电极结构的氮化镓基异质结场效应晶体管, 中国发明专利， 申请日期：2012.09.05，授权号：ZL201210324418.9，授权日期：2014.12.10

[14]杜江锋, 赵子奇,马坤华 等. 一种具有复合缓冲层的氮化镓基高电子迁移率晶体管，中国发明专利， 申请日期：2012.05.10，授权号：ZL201210142937.3，授权日期：2014.07.23

[13] 周伟, 靳翀,杜江锋等. 一种氮化镓基高电子迁移率晶体管，中国发明专利， 申请日期：2006.12.31，授权号：ZL200610022726.0，授权日期：2009.04.15

[12]杜江锋，辛奇，李振超，白智元，于奇.一种具有复合介质层结构的结势垒肖特基二极管，中国发明专利，申请号：201710564683.7，申请日期：2017.07.12

[11]杜江锋,蒋知广,白智元,于奇. 具有衬底内复合介质层结构的氮化镓异质结场效应管，中国发明专利，申请号：201710033229.9

[10]杜江锋,白智元,蒋知广,于奇. 一种双结型栅氮化镓异质结场效应管，中国发明专利，申请号：201610928271.2

[09]杜江锋,白智元,蒋知广,于奇. 一种氮面增强型氮化镓基异质结场效应管，中国发明专利，申请号：201610934823.0

[08]杜江锋, 李振超, 刘东, 白智元, 于奇，李述洲. 半导体结构、半导体组件及功率半导体器件，中国发明专利， 申请号：201610522196.X

[07]杜江锋, 李振超. 一种具有半绝缘层的氮化镓基高电子迁移率晶体管, 中国发明专利，申请号：201610270783.4

[06]杜江锋,刘东,白智元,潘沛霖,于奇. 电荷补偿耐压结构垂直氮化镓基异质结场效应管, 中国发明专利, 申请号：201510410936.6

[05]杜江锋,刘东,白智元 ,潘沛霖,于奇. 具有复合低K电流阻挡层的垂直氮化镓基异质结场效应管. 中国发明专利, 申请号： 201510367028.3

[04]杜江锋, 潘沛霖, 陈南庭, 于奇. 一种具有局部帽层的氮化镓基异质结场效应晶体管. 中国发明专利, 201410427351.0

[03]杜江锋, 潘沛霖, 陈南庭, 王康, 于奇. 一种具有负离子注入钝化层的场效应晶体管. 中国发明专利, 201410473240.3

[02]杜江锋, 赵子奇 等. 一种带有p型氮化镓埋层的垂直氮化镓基异质结场效应晶体管，中国发明专利, 201310049018.6

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