期刊论文：

52.Wanjun Chen, Hong Tao, Lunfei Lou, Chao Liu, Wu Cheng, Xuefeng Tang, Hongquan Liu,Qi Zhou,Xiaochuan Deng, Zhaoji Li, Bo Zhang, Member, IEEE, "Low Loss Insulated Gate Bipolar Transistor with Electron Injection (EI-IGBT),"IEEE Journal of the Electron Devices SocietyPage(s):275 - 282 / DOI:10.1109/JEDS.2017.2701791.

51.Yuanyuan Shi,Qi Zhou *,Anbang Zhang, Liyang Zhu, Yu Shi, Wanjun Chen, Zhaoji Li and Bo Zhang,"Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3GaNMOS Device,"Nanoscale Research Letters(2017) 12:342.

50.Fangzhou Wang,Wanjun Chen *,Zeheng Wang, Ruize Sun, Jin Wei, Xuan Li, Yijun Shi, Xiaosheng Jin,Xiaorui Xu, Nan Chen,Qi Zhou,Bo Zhang, "Simulation design of uniform low turn-on voltage and highreverse blocking AlGaNGaN power field effect rectifier with trench heterojunction anode,"Superlattices and Microstructures105 (2017) 132-138.

49.Xiaorui Xu,Wanjun Chen *,Chao Liu, Nan Chen, Hong Tao, Yijun Shi, Yinchang Ma,Qi Zhou,and Bo Zhang， "Gate field plate IGBT with trench accumulation layer for extreme injection enhancement,"Superlattices and Microstructures104 (2017) 54-62.

48.Qi Zhou *, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang, "Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode,"IEEE Trans. on Industrial Electronics,in press (Impact factor: 6.38)

47. Q. Zhou *, Z. H. Wang, X. Y. Zhou, A. B. Zhang, Y. Y. Shi, L. Liu, Y. G. Wang, Y. L. Fang, Y. J. Lv, Z. H. Feng,and B. Zhang, "Physics of Dynamic Threshold Voltage and Steep Subthreshold Swing in Al2O3/InAlN/GaNMOSHEMTs,"Semicond. Sci. Technol., vol. 31, pp. 035005, Jan. 2016.

46.Qi Zhou*, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang*, "7.6 V Threshold Voltage High Performance Normally-off Al2O3/GaN MOSFET Achieved byInterface Charge Engineering," IEEE Electron Device Lettersvol. 37, no.2, pp.165 - 168, Feb. 2016.

被半导体行业国际知名杂志 《Semiconductor Today》作为GaN功率器件重要研究进展进行专题报道。

报道链接：http://www.semiconductor-today.com/news_items/2016/jan/uest_190116.shtml

45.Yuanyuan Shi,Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, Wei Huang and Bo Zhang," Impact of interface traps on switching behavior of Normally-OFF AlGaN/GaN MOS-HEMTs,"Physica Solidi Status-C 1–4 (2016) / DOI 10.1002/pssc.201510189

44.Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, Chao Zhao, Xinyu Liu, Jinhan Zhang,Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia ." Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs"[J].Journal of acuum Science & Technology B, 2016, 34(4): 041202.

43.Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng,Qi Zhou, Zhaoji Li and Bo Zhang, "High Peak Current MOS Gate-Triggered Thyristor with Fast Turn-on Characteristics for Solid-State Closing SwitchApplications,"IEEE Electron Device Letters vol. 37, no.2, pp.205-208, Feb. 2016.

42.Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao, Shuiming Li,Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen,Qi Zhou, Bo Zhang, and Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High- Temperature Gate Recess,"IEEE Trans. on Electron Devices vol. 63, no.2, pp.614-619, Feb. 2016.

41.Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu,Qi Zhou, Wanjun Chen and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing,"Applied Physics Lett.,vol. 107, no. 26, pp.262109, 2015

40.Qi Zhou*, Li Liu, Xingye Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection,"IET Electronics Lett.,vol. 51, no. 23, pp: 1889–1891, Nov. 2015

39.Qi Zhou*, Yang Jin, Yuanyuan Shi, Jinyu Mou, Bao Xu, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode with MIS-Gated Hybrid Diode,"IEEE Electron Device Lett., vol. 36, no. 7, Jul. 2015.

被国际半导体行业著名杂志《Semiconductor Today》作为GaN功率半导体技术重要研究进展进行专题报道。

报道链接：http://www.semiconductor-today.com/news_items/2015/may/uest_270515.shtml

38.Qi Zhou*, Bowen Chen, Yang Jin, Sen Huang, Ke Wei, Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High- Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs with 626MW/cm2 Figure of Merit,"IEEE Trans. on Electron Devices, vol. 62, no. 3, pp: 776-781, Mar. 2015.

37.Qi Zhou*, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications,"Solid-State Electronics,vol.91, pp: 19-23, 2014.

36.Qi Zhou*,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement,"IEEE Trans. on Electron Devices, vol. 60, no. 3, pp: 1075-1081, Mar. 2013.

35.Qi Zhou*,, W. Chen, C. Zhou, B. Zhang and K.J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection,"IET Electronics Lett., vol. 49, no. 22, pp: 1391-1393, Oct. 2013.

34.Qi Zhou*,, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications,"Electrochemical Society Transactions, vol. 54, no. 4, pp: 351-363, Oct. 2013.

33. Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance,"Jpn. J. Appl. Phys. vol. 51, 04DF02, Apr. 2012.

32.Qi Zhou*,, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT with Enhanced Breakdown Voltage,"IEEE Electron Device Lett., vol. 33, no. 1, pp:19-21, Jan. 2012.

31.Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou,Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jurgen Schubert, and Kevin J. Chen, "AlGaN/GaN MISHEMTs with High-k LaLuO3 Gate Dielectric,"IEEE Electron Device Lett., vol. 33, no. 7, pp: 979-981, Jul. 2012.

30.Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN power tunnel-junction FETs, "Phys. Status Solidi-C, vol. 9, no. 3-4, pp: 871-874, Mar. 2012.

29. Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal-2DEG Tunnel Junction Field Effect Transistor"IEEE Electron Device Lett., vol. 32, no. 9, pp: 1221-1223, Sep. 2011.

28.Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode,"IEEE Microwave and Wireless Components Lett., vol. 20, no. 5, pp: 277-279, May. 2010.

27.King-Yuen Wong, Wanjun Chen,Qi Zhou, and Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications,"IEEE Trans. on Electron Devices, vol. 56, no. 12, pp: 2888-2894, Dec. 2009.

26.S. J. Li,Qi Zhou, Y. J. Xie, and Z. Y. Lei, "THEORETICAL AND EXPERIMENTAL INVESTIGATION ON PCB HELIX ANTENNA,"J. of Electromagnetic Waves and Applications,vol. 21, no. 7, pp. 877-887, Jul. 2007.

25.Qi Zhou*, Y. J. Xie, and Z. Chen, "Prediction of Equipment-to-Equipment Coupling Through Antennas Mounted on and Aircraft,"J. of Electromagnetic Waves and Applications,vol. 21, no. 5, pp: 653-663, 2007.

国际顶级学术会议 （IEDM、ISPSD）：

24.Chao Liu,Wanjun Chen*, Hong Tao, Yijun Shi, Xuefeng Tang, Wuhao Gao,Qi Zhou,Zhaoji Liand Bo Zhang, "Transient Overvoltage Induced Failure of MOScontrolled Thyristor under Ultra-high di/dtCondition,"Int. Symp. on Power Semicond.Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun 1, 2017.

23.Yijun Shi,Wanjun Chen*,Chao Liu, Guanhao Hu, Jie Liu, Xingtao Cui, Hong Tao , Jinhan Zhang,Yuanyuan Shi, Anbang Zhang, Zhaoji Li,Qi Zhou,Bo Zhang, "A High-Performance GaN E-mode ReverseBlocking MISHEMT with MIS Field Effect Drain for Bidirectional Switch,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun1, 2017.

22.Anbang Zhang,Qi Zhou*, Wanjun Chen, Yuanyuan Shi, Zhaoji Li, and Bo Zhang, "An AlGaN/GaN Current Regulating Diode,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Sapporo, Japan, May 28-Jun1, 2017.

21. Qi Zhou*,Anbang Zhang, Ruopu Zhu, Yuanyuan Shi, Zeheng Wang, Li Liu, Bowen Chen, Yang Jin, Wanjun Chen, and Bo Zhang, "Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Prague, Czech Republic, June 12–16, 2016.

20.Wanjun Chen*, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu,Qi Zhou, Zhaoji Li, and Bo Zhang, "Experimentally Demonstration a Cathode Short MOS-Controlled Thyristor (CS-MCT) for Single or Repetitive Pulse Applications,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Prague, Czech Republic, June 12–16, 2016.

19. Qi Zhou*, Yang Jin, Xu Bao, Jingyu Mou, Bowen Chen, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, and Bo Zhang, "Over 1.1 kV Breakdown Voltage, Low Turn-on Voltage GaN-on-Si Power Diode with MIS-Gated Hybrid Anode,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hong Kong, China, May, 2015.GaN领域迄今中国大陆在该顶级会议唯一大会口头报告

18. Qi Zhou*, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, and Kevin J. Chen, "High Breakdown Voltage InAlN/GaN HEMTs Achieved by Schottky-Source Technology,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Kanazawa, Japan., pp. 195-198, May. 2013.GaN领域中国大陆在该顶级会议第一篇论文

17.Jinhan Zhang, Sen Huang,Qi Zhou *, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, Xiaojuan Chen, Xinyu Liu, Zhongjie Yu, Wanjun Chen, and Bo Zhang, "ON-State Breakdown Mechanism of GaN Power HEMTs,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), Hawaii, US., pp. 362-365, Jun. 2014.

16.Li Yuan, Hongwei Chen,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "A Novel Normally-off GaN Power Tunnel Junction FET,"Int. Symp. on Power Semicond. Devices & IC's (ISPSD), San Diego, US., pp. 276- 279, May. 2011.

15. Qi Zhou*, Sen Huang, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky Source/Drain Al2O3/InAlN/GaN MIS-HEMT with Steep Sub-threshold Swing and High ON/OFF Current Ratio,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 777-780, Dec. 2011.

14.Kevin J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang,Qi Zhou, C. Zhou, B. K. Li, and J. N. Wang, "Physics of Fluorine Plasma Ion Implantation for GaN Normally-off HEMT Technology,"Int. Electon Device Meeting (IEDM), Washington, US., pp. 467-470, Dec. 2011.（Invited paper）

其他国际学术会议：

13.Kai Hu,Qi Zhou†,"Lateral AlGaN/GaN power diode with MIS-Gated Hybrid Anode for ultra-low turn-on voltage and high breakdown voltage," Accepted.

12.Ruopu Zhu,Qi Zhou†, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, and Bo Zhang,"High Performance Normally-off Al2O3/GaN MOSFETs with Record High Threshold Voltage by Interface Charge Engineering,"IEEE Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016.

11.Yi Yang,Qi Zhou†, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang,"0.3 VT/1.1 kV AlGaN/GaN Lateral Power Diode with MIS-Gated Hybrid Anode on Silicon Substrate,"IEEE Int.Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China,Oct. 2016

10.Yuanyuan Shi,Qi Zhou*, Yang Jin, Bowen Chen, Wanjun Chen, and Bo Zhang, "Impact of interface states on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,"11th Intl. Conference onNitrideSemiconductors (ICNS), Aug. 2015

9.Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Yijun Shi,Qi Zhou, Wanjun Chen, and Bo Zhang, "Microstructure and physical mechanism of Au-free ohmic contacts to AlGaN/GaN heterostructures annealed at 600 C,"11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

8.Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu,Qi Zhou, Wanjun Chen, Bo Zhang, "Study of interface traps and fixed charges between GaN(cap)/AlGaN/AlN/GaN heterostructure and SiNx gate dielectric grown by Low Pressure Chemical Vapor Deposition,"11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

7. Qi Zhou*, Ling Wang, Xu Bao, Jinyu Mou, Yuanyuan Shi, Zhaoyang Liu, Wanjun Chen, and Bo Zhang, "High Performance AlGaN/GaN Power Diode with Edge-Terminated Hybrid Anode,"IEEE 12th Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT), Guilin, China, Oct. 2014.

6.Qi Zhou*, W. J. Chen, S. H. Liu, B. Zhang, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Heterojunction: Prospects for Robust GaN Power Devices,"224th Electronchemical Society Meeting, SanFrancisco, US., Oct. 2013. (Invited paper)

5.Hongwei Chen, Li Yuan,Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction FETs,"9th Int. Conf. on Nitride Semiconductors (ICNS), Glasgow, Scotland, Jul. 2011.

4. Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Schottky Source/Drain MIS-HEMT with High Breakdown Voltage,"Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 624-625, Sep. 2011.

3.Qi Zhou*, Hongwei Chen, Chunhua Zhou, Zhihong Feng, Shujun Cai, Kevin J. Chen, "Observation of Trap-Assisted Steep Sub-threshold Swing in Schottky Source/Drain Al2O3/InAlN/GaN MISHEMT,"Device Research Conference (DRC), Santa Barbara, US., pp. 71-72, Jun. 2011.

2.Qi Zhou*, King-Yuen Wong, Wanjun Chen, and Kevin J. Chen, "High-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN-Based Lateral Field-Effect Diode,"IEEE Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), HongKong, China, pp. 1-4, 2009.

1.Qi Zhou*, King Yue Wong, Wanjun Chen, and Kevin J. Chen, "Microwave Detector Using AlGaN/GaNHEMT-Compatible Lateral-Field Effect Rectifier (L-FER),"Topical Workshop on Heterostructure Microelectronics (TWHM), Nagano, Japan, Aug. 2009.