研究方向

研究内容1

热释电材料与器件，包括热释电材料及其单元/多元器件、非分散红外线(NDIR)气体传感器、读出电路及测试系统。

研究内容2

氧化物功能薄膜生长技术研究，包括氧化物功能薄膜外延生长动力学、氧化物薄膜材料与半导体衬底集成生长。

学术成果

W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, D. Zhao, J. Xiong, and Y. Zhang. Effects of chemical fluctuations on microstructures and properties of multiferroic BiFeO3 thin films. Appl. Phys. Lett., 2007, 91, 082501.

W. B. Luo, J. Zhu, Y. R. Li, X. P. Wang, and Y. Zhang. Integration of （208） oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer. J. Appl. Phys., 2009, 105: 104102.

W. B. Luo, J. Zhu, H. Chen, X. P. Wang, Y. Zhang, and Y. R. Li. Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN. J. Appl. Phys. 2009, 106: 104120.

W. B. Luo, J. Zhu, Y. R. Li, Y. Zhang, and H. Chen. Epitaxial growth and ferroelectricity of BaTiO3 on SrRuO3/TiO2 buffered GaN. Ferroelectrics, 2010,406:46-61.

W. B. Luo,; Zhu, J.; Zeng, H. Z, et al. Effects of SrTiO(3)/TiO(2) buffer layer on structural and electrical properties of BiFeO(3) thin films grown on GaN (0002), J. Appl. Phys. 2011, 109: 104108.

Luo, WB;Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H, Epitaxial growth of SrTiO3 (0 0 1) films on multilayer buffered GaN (0 0 0 2) by pulsed laser deposition, JOURNAL OF PHYSICS D-APPLIED PHYSICS. 2013, 46(6): 065307

Luo, WB;Jing, J; Shuai, Y ; Zhu, J; Zhang, WL ; Zhou, S; Gemming, S; Du, N; Schmidt, H, Effects of the TiO2 buffer thickness on SrTiO3 (111) epitaxial films grown on GaN (0002), J. Appl. Phys. 2013, 113: 154103

Peng, QX ;Luo, WB; Meng, J ;; Fu, WY ;; Qing, X ;; Sun, XY ;; Shuai, Y ;; Wu, CG ;; Zhang, WL , A new method of depositing high figure-of-merit porous PZT pyroelectric thick film using [001]-oriented PZT nanorod by electrophoresis deposition, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25:297-302

Peng, QX;Luo, WB; Wu, CG ; Sun, XY; Li, P Chen, XY., The fabrication and pyroelectric properties of single crystalline PZT nanorod synthesized by hydrothermal reaction, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2014, 25, 1627-1632

ABO3/MgO/GaN异质结构及其制备方法. 中国, 发明专利, 申请号:200910058648.3. CN101527314

ABO3/TiO2/MgO/Ⅲ-V族氮化物半导体异质结构及制备方法 中国，发明专利，CN101826550

一种补偿型热释电红外单元探测器，中国, 发明专利, CN103474502

一种厚膜热释电敏感元及其制备方法．中国，发明专利， 201510109992.6